? ? ? pnp BDT82 ? bdt84 ? bdt86 ? bdt88 09/11/2012 comset semiconductors 1 | 4 ? silicon power transistors the BDT82 ? bdt84 ? bdt86 ? bdt88 are epit axial base transistors in a to-220 plastic envelope. they are intended for use in audio output stages and general amplifier and switching appications. npn complements are bdt81 ? bdt83 ? bdt85 ? bdt87. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage -ib = 0 BDT82 -60 v bdt84 -80 bdt86 -100 bdt88 -120 v cbo collector-base voltage -ie = 0 BDT82 -60 v bdt84 -80 bdt86 -100 bdt88 -120 v ebo emitter-base voltage -ic = 0 -7 v i c collector current -15 a i cm collector peak current -20 a i b base current -4 a pt total power dissipation @ tc = 25 125 w t j junction temperature 150 c t stg storage temperature -65 to +150 c thermal characteristics symbol ratings value unit r thja thermal resistance, junction to ambient 70 k/w r thjmb thermal resistance, junction to mounting base 1 k/w
? ? ? pnp BDT82 ? bdt84 ? bdt86 ? bdt88 09/11/2012 comset semiconductors 2 | 4 ? electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cb0 collector cutoff current i e =0a, v cb = -60 v BDT82 - - -0.2 ma i e =0a, v cb = -80 v bdt84 i e =0a, v cb = -100 v bdt86 i e =0a, v cb = -120 v bdt88 i ces collector cutoff current v be =0, v ce = -60v BDT82 - - -1 ma v be =0, v ce = -80v bdt84 bdt86 v be =0, v ce = -100v v be =0, v ce = -120v bdt88 i ebo emitter cutoff current v eb = -7 v i c =0 BDT82 - - -0.1 ma bdt84 bdt86 bdt88 h fe dc current gain (*) i c = -50ma v ce = -10v BDT82 40 - - - bdt84 bdt86 bdt88 i c = -5a v ce = -4v BDT82 40 - - bdt84 bdt86 bdt88 v ce(sat) collector-emitter saturation voltage (*) i c = -5a i b = -0.5a BDT82 - - -1 v bdt84 bdt86 bdt88 i c = -5a i b = -0.5a BDT82 - - -1.6 bdt84 bdt86 bdt88 v be base-emitter voltage (*) i c = -7a i b = -0.7a BDT82 - - -1.5 v bdt84 bdt86 bdt88
? ? ? pnp BDT82 ? bdt84 ? bdt86 ? bdt88 09/11/2012 comset semiconductors 3 | 4 ? electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s)sec min typ max unit i s/b second breakdown collector current v ce = -50 v, t p = 100 ms -2.5 - - a f t transition frequency v ce = -10 v, i c = -0.5 a, f=1 mhz - 20 - mhz t on turn-on time i c = -7 a i b1 = -i b2 = -0.7 a - - 1 s t off turn-off time - - 2 (*) pulse duration = 300 s, <= 2%
? ? ? pnp BDT82 ? bdt84 ? bdt86 ? bdt88 09/11/2012 comset semiconductors 4 | 4 ? mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised october 2012 ????????? ? information furnished is believed to be accurate and reliable. however, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. data a re subject to change without notice. comset semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. comset semiconductors? products are not authorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter package collector
|
